Theodoros Serghiou of the University of Glasgow’s James Watt School of Engineering led the development of the EGOFET. He said ...

Compound Semiconductor™ is an Angel Business Communications publication.

The Japanese AIST Group (consisting of National Institute of Advanced Industrial Science and Technology and AIST Solutions) ...

Displacing GaAs PAs is a long-term goal for Finwave, which has made progress on many fronts since Lesaicherre took charge in ...

APC-E’s initial product launch includes 650V SiC Schottky barrier diodes (SBDs) with low forward voltage to enhance energy savings in power supplies across a wide range of applications. Also included ...

KRISS has addressed these challenges by developing a new InAsP material, grown on an InP substrate as the light-absorbing ...

Scientists from the French research organisation CEA-Leti presented three papers at Photonics West 2025 detailing the ...

Nimy Resources, a mining company, has entered into a collaboration with mineral supply chains firm M2i Global to secure a ...

To improve the durability of tin perovskite, a method called Ruddlesden-Popper (RP) has been proposed that introduces large ...

Tunable lasing at around 405 nm is realised with an InGaN device featuring a narrow-ridge active channel and a periodically ...

For the growth of thin films, the introduction of instrumentation began with ‘traditional’ pressure and temperature ...

Navitas Semiconductor,. which makes the GaNFast GaN and GeneSiC SiC power semiconductors, has announced that both ...